AOTF7N60 Todos los transistores

 ..1. Size:498K  aosemi
 aotf7n60.pdf

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:488K  aosemi
 aot7n60 aotf7n60.pdf

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:252K  inchange semiconductor
 aotf7n60.pdf

isc N-Channel MOSFET Transistor AOTF7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 0.1. Size:339K  aosemi
 aotf7n60fd.pdf

AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 700V@150 The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 7A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 0.2. Size:252K  inchange semiconductor
 aotf7n60fd.pdf

isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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 aot7n65 aotf7n65.pdf

AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:408K  aosemi
 aotf7n65.pdf

AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.3. Size:252K  inchange semiconductor
 aotf7n65.pdf

isc N-Channel MOSFET Transistor AOTF7N65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =1.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo