AOTF8N60 Todos los transistores

 ..1. Size:441K  aosemi
 aotf8n60.pdf

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf8n60.pdf

isc N-Channel MOSFET Transistor AOTF8N60 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

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 aot8n65 aotf8n65.pdf

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:154K  aosemi
 aotf8n65.pdf

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.3. Size:252K  inchange semiconductor
 aotf8n65.pdf

isc N-Channel MOSFET Transistor AOTF8N65 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo