AOU3N60 Todos los transistores

 ..1. Size:276K  aosemi
 aou3n60.pdf

AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.5A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..2. Size:571K  aosemi
 aod3n60 aou3n60.pdf

AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is VDS 700V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.5A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 ..3. Size:261K  inchange semiconductor
 aou3n60.pdf

isc N-Channel MOSFET Transistor AOU3N60 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =3.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

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 aou3n50.pdf

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.2. Size:701K  aosemi
 aod3n50 aou3n50.pdf

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150 designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.3. Size:274K  inchange semiconductor
 aou3n50.pdf

isc N-Channel MOSFET Transistor AOU3N50 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose