AOU3N60 Todos los transistores

 

AOU3N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOU3N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 9.9 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 31.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: TO-251
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AOU3N60 Datasheet (PDF)

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AOU3N60

AOD3N60/AOU3N60600V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N60 & AOU3N60 have been fabricated usingan advanced high voltage MOSFET process that is VDS 700V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.5Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

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AOU3N60

isc N-Channel MOSFET Transistor AOU3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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AOU3N60

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

 9.2. Size:701K  aosemi
 aod3n50 aou3n50.pdf pdf_icon

AOU3N60

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BSS84KR

 

 
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