HUF75229P3 Todos los transistores

 

HUF75229P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75229P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 44 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 75 nC

Resistencia drenaje-fuente RDS(on): 0.022 Ohm

Empaquetado / Estuche: TO220AB

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HUF75229P3 Datasheet (PDF)

1.1. huf75229p3.pdf Size:216K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75229P3 Data Sheet December 2001 44A, 50V, 0.022 Ohm, N-Channel UltraFET Features Power MOSFET • 44A, 50V This N-Channel power MOSFET is • Low On-Resistance, rDS(ON) = 0.022Ω manufactured using the innovative • Temperature Compensating PSPICE® Model UltraFET® process. This advanced process technology achieves the • Thermal Impedance SPICE Model lowest possible on-

5.1. huf75631sk8t.pdf Size:249K _update_mosfet

HUF75229P3
HUF75229P3

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

5.2. huf75623s3st.pdf Size:198K _update_mosfet

HUF75229P3
HUF75229P3

HUF75623P3, HUF75623S3ST Data Sheet December 2001 22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN • Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER T

 5.3. huf75631s3st.pdf Size:200K _update_mosfet

HUF75229P3
HUF75229P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice an

5.4. huf75531sk8t.pdf Size:238K _update_mosfet

HUF75229P3
HUF75229P3

HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models 5 - Temperature Compensated PSPICE® and SABER™ 1 Electrical Models 2 3 - Spice and SABER Thermal Impedance Models 4 - www.fairchildsemi.com • Peak Curren

 5.5. huf75617d3st huf75617d3 huf75617d3s.pdf Size:196K _update_mosfet

HUF75229P3
HUF75229P3

 HUF75617D3, HUF75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance SOURCE DRAIN DRAIN - rDS(ON) = 0.090Ω, VGS = 10V (FLANGE) GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN (FLANGE) - Spice

5.6. huf75925d3st.pdf Size:263K _update_mosfet

HUF75229P3
HUF75229P3

HUF75925D3ST Data Sheet August 2004 11A, 200V, 0.275 Ohm, N-Channel, UltraFET® Power MOSFET Packaging Features • Ultra Low On-Resistance - rDS(ON) = 0.275Ω, VGS = 10V DRAIN (FLANGE) • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com HUF75925D3ST • Peak

5.7. huf75345s3 huf75345s3st.pdf Size:326K _update_mosfet

HUF75229P3
HUF75229P3

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models

5.8. huf75332s3st.pdf Size:305K _update_mosfet

HUF75229P3
HUF75229P3

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

5.9. huf75337s3.pdf Size:122K _update_mosfet

HUF75229P3
HUF75229P3

HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V These N-Channel power MOS- FETs are manufactured using • Ultra Low On-Resistance, rDS(ON) = 0.014Ω the innovative UltraFET™ pro- cess. This advanced process technology achieves the low- • Diode Exhibits

5.10. huf75842s3s huf75842s3st.pdf Size:196K _update_mosfet

HUF75229P3
HUF75229P3

HUF75842P3, HUF75842S3S Data Sheet December 2001 43A, 150V, 0.042 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN • Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN - Spice and SABER Therm

5.11. huf75831sk8t.pdf Size:247K _update_mosfet

HUF75229P3
HUF75229P3

 HUF75831SK8 Data Sheet December 2001 3A, 150V, 0.095 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.095Ω, VGS = 10V • Simulation Models 5 - Temperature Compensated PSPICE® and SABER™ 1 Electrical Models 2 - Spice and SABER Thermal Impedance Models 3 4 - www.fairchildsemi.com • Peak

5.12. huf75939p3.pdf Size:194K _update_mosfet

HUF75229P3
HUF75229P3

HUF75939P3, HUF75939S3ST Data Sheet December 2001 22A, 200V, 0.125 Ohm, N-Channel, UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance SOURCE DRAIN • rDS(ON) = 0.125Ω, VGS = 10V DRAIN (FLANGE) GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER© Electrical Models SOURCE - Spice and SABER© Thermal

5.13. huf75344a3.pdf Size:430K _update_mosfet

HUF75229P3
HUF75229P3

October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced • RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan

5.14. huf75329d3st.pdf Size:660K _update_mosfet

HUF75229P3
HUF75229P3

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou

5.15. huf75637s3 huf75637s3st.pdf Size:200K _update_mosfet

HUF75229P3
HUF75229P3

HUF75637P3, HUF75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.030Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and S

5.16. huf75639s3st.pdf Size:227K _update_mosfet

HUF75229P3
HUF75229P3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber T

5.17. huf75645s3st.pdf Size:203K _update_mosfet

HUF75229P3
HUF75229P3

 HUF75645P3, HUF75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN • Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.014Ω, VGS = 10V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and Saber Th

5.18. huf75829d3st huf75829d3 huf75829d3s.pdf Size:191K _update_mosfet

HUF75229P3
HUF75229P3

 HUFA75829D3, HUFA75829D3S Data Sheet December 2001 18A, 150V, 0.110 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN • Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.110Ω, VGS = 10V GATE GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice

5.19. huf75343s3 huf75343s3st.pdf Size:280K _update_mosfet

HUF75229P3
HUF75229P3

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and

5.20. huf75545s3 huf75545s3st.pdf Size:267K _update_mosfet

HUF75229P3
HUF75229P3

 HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE • Ultra Low On-Resistance - rDS(ON) = 0.010Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ DRAIN Electrical Models (FLANG

5.21. huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf Size:229K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Impe

5.22. huf75542p3-s3s.pdf Size:192K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.014?, VGS = 10V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Models (FLANGE)

5.23. huf75842p3.pdf Size:197K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75842P3, HUF75842S3S Data Sheet December 2001 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance

5.24. huf75309t3st.pdf Size:180K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE® M

5.25. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

5.26. huf75631sk8.pdf Size:254K _fairchild_semi

HUF75229P3
HUF75229P3

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

5.27. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the lowest pos

5.28. huf75652g3.pdf Size:195K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.008?, VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN HUF75652G3 (TAB) Peak C

5.29. huf75343.pdf Size:205K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode

5.30. huf75852g3 f085.pdf Size:259K _fairchild_semi

HUF75229P3
HUF75229P3

HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-247 Features SOURCE • Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016Ω, VGS = 10V • Peak Current vs Pulse Width Curve • UIS Rating Curve • Qualified to AEC Q101 • RoHS Compliant DRAIN (TAB) Ordering Information Symbol PART NUMBER PACKAGE BRA

5.31. huf75852g3.pdf Size:193K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016?, VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN (TAB) Peak Current vs P

5.32. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf Size:331K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

5.33. huf75631s3s.pdf Size:202K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Therm

5.34. huf75329d3-s.pdf Size:225K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest pos

5.35. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

5.36. huf75637.pdf Size:201K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75637P3, HUF75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.030Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and S

5.37. huf75307t3st.pdf Size:170K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET • 2.6A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.090Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE

5.38. huf75545p3 huf75545s3 huf75545s3s.pdf Size:270K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANGE) HUF75545S

5.39. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th

5.40. huf75645p3 huf75645s3s.pdf Size:204K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75645P3, HUF75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.014?, VGS = 10V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and Saber Thermal Impedan

5.41. huf75329g3 huf75329p3 huf75329s3s.pdf Size:252K _fairchild_semi

HUF75229P3
HUF75229P3

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024? are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on the web at: www.

5.42. huf75639s f085a.pdf Size:230K _fairchild_semi

HUF75229P3
HUF75229P3

HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Peak Current vs Pulse Width Curve are manufactured using the • UIS Rating Curve innovative UltraFET® process. This advanced process technology • Related Literature achieves the lowest possible on-resistance per silicon ar

5.43. huf75623p3.pdf Size:98K _intersil

HUF75229P3
HUF75229P3

HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V SOURCE DRAIN • Simulation Models GATE - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com DRAIN (

5.44. huf75344.pdf Size:142K _intersil

HUF75229P3
HUF75229P3

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S

5.45. huf75332.pdf Size:214K _intersil

HUF75229P3
HUF75229P3

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance

Otros transistores... HP4936DY , HPLR3103 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N , 75339P , HUF75307D3 , HUF75307D3S , HUF75307D3ST , HUF75307P3 , HUF75307T3ST , HUF75309D3 , HUF75309D3S , HUF75309D3ST .

 
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