HUF75307D3S Todos los transistores

 

HUF75307D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75307D3S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 16 nC

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: TO252AA

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HUF75307D3S Datasheet (PDF)

2.1. huf75307t3st.pdf Size:170K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET • 2.6A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.090Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE

3.1. huf75309t3st.pdf Size:180K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE® M

 4.1. huf75345s3 huf75345s3st.pdf Size:326K _update_mosfet

HUF75307D3S
HUF75307D3S

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models

4.2. huf75332s3st.pdf Size:305K _update_mosfet

HUF75307D3S
HUF75307D3S

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 4.3. huf75337s3.pdf Size:122K _update_mosfet

HUF75307D3S
HUF75307D3S

HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V These N-Channel power MOS- FETs are manufactured using • Ultra Low On-Resistance, rDS(ON) = 0.014Ω the innovative UltraFET™ pro- cess. This advanced process technology achieves the low- • Diode Exhibits

4.4. huf75344a3.pdf Size:430K _update_mosfet

HUF75307D3S
HUF75307D3S

October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced • RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan

 4.5. huf75329d3st.pdf Size:660K _update_mosfet

HUF75307D3S
HUF75307D3S

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou

4.6. huf75343s3 huf75343s3st.pdf Size:280K _update_mosfet

HUF75307D3S
HUF75307D3S

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and

4.7. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

4.8. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the lowest pos

4.9. huf75343.pdf Size:205K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode

4.10. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf Size:331K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

4.11. huf75329d3-s.pdf Size:225K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest pos

4.12. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

4.13. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th

4.14. huf75329g3 huf75329p3 huf75329s3s.pdf Size:252K _fairchild_semi

HUF75307D3S
HUF75307D3S

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024? are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on the web at: www.

4.15. huf75344.pdf Size:142K _intersil

HUF75307D3S
HUF75307D3S

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S

4.16. huf75332.pdf Size:214K _intersil

HUF75307D3S
HUF75307D3S

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance

Otros transistores... HPLU3103 , HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N , HUF75229P3 , HUF75307D3 , IRFZ48N , HUF75307D3ST , HUF75307P3 , HUF75307T3ST , HUF75309D3 , HUF75309D3S , HUF75309D3ST , HUF75309P3 , HUF75309T3ST .

 

 
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