AOWF15S60 Todos los transistores

 

AOWF15S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOWF15S60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   Qgⓘ - Carga de la puerta: 15.6 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-262F

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AOWF15S60 Datasheet (PDF)

 ..1. Size:327K  aosemi
aowf15s60.pdf

AOWF15S60
AOWF15S60

AOW15S60/AOWF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW15S60 & AOWF15S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 63Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 16nCBy providing low RDS(on), Qg an

 6.1. Size:262K  aosemi
aowf15s65.pdf

AOWF15S60
AOWF15S60

AOW15S65/AOWF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW15S65 & AOWF15S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 60Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 17.2nCBy providing low RDS(on), Qg

 9.1. Size:324K  aosemi
aowf14n50.pdf

AOWF15S60
AOWF15S60

AOW14N50/AOWF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW14N50 & AOWF14N50 have been fabricated 600V@150using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V)designed to deliver high levels of performance and

 9.2. Size:341K  aosemi
aowf10n65.pdf

AOWF15S60
AOWF15S60

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.3. Size:222K  aosemi
aowf12t60p.pdf

AOWF15S60
AOWF15S60

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 9.4. Size:259K  aosemi
aowf11s65.pdf

AOWF15S60
AOWF15S60

AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg

 9.5. Size:262K  aosemi
aowf12n60.pdf

AOWF15S60
AOWF15S60

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 9.6. Size:496K  aosemi
aow10n60 aowf10n60.pdf

AOWF15S60
AOWF15S60

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.7. Size:542K  aosemi
aowf10t60p.pdf

AOWF15S60
AOWF15S60

AOW10T60P/AOWF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.8. Size:240K  aosemi
aowf12n65.pdf

AOWF15S60
AOWF15S60

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.9. Size:277K  aosemi
aowf11s60.pdf

AOWF15S60
AOWF15S60

AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a

 9.10. Size:281K  aosemi
aowf12n50.pdf

AOWF15S60
AOWF15S60

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 9.11. Size:476K  aosemi
aowf160a60.pdf

AOWF15S60
AOWF15S60

AOWF160A60/AOW160A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 9.12. Size:299K  aosemi
aowf11n70.pdf

AOWF15S60
AOWF15S60

AOWF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF11N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.13. Size:447K  aosemi
aowf11n60.pdf

AOWF15S60
AOWF15S60

AOWF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOWF11N60 has been fabricated using an 700V@150advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 9.14. Size:432K  aosemi
aowf11c60.pdf

AOWF15S60
AOWF15S60

AOWF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

 9.15. Size:476K  aosemi
aowf125a60.pdf

AOWF15S60
AOWF15S60

AOW125A60/AOWF125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

 9.16. Size:371K  aosemi
aowf190a60.pdf

AOWF15S60
AOWF15S60

AOWF190A60TM 600V, MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.17. Size:464K  aosemi
aowf190a60c.pdf

AOWF15S60
AOWF15S60

AOWF190A60C/AOW190A60CTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.18. Size:245K  aosemi
aowf10n60.pdf

AOWF15S60
AOWF15S60

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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