AOWF4N60 Todos los transistores

 

AOWF4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOWF4N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-262F

 Búsqueda de reemplazo de MOSFET AOWF4N60

 

AOWF4N60 Datasheet (PDF)

 ..1. Size:302K  aosemi
aowf4n60.pdf

AOWF4N60
AOWF4N60

AOWF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOWF4N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.1. Size:284K  aosemi
aowf4s60.pdf

AOWF4N60
AOWF4N60

AOW4S60/AOWF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW4S60 & AOWF4S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 16Adesigned to deliver high levels of performance and RDS(ON),max 0.9robustness in switching applications. Qg,typ 6nCBy providing low RDS(on), Qg and EOSS

 9.2. Size:497K  aosemi
aowf412.pdf

AOWF4N60
AOWF4N60

AOWF412100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 100VThe AOWF412 are fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 30Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.3. Size:623K  aosemi
aowf450a70.pdf

AOWF4N60
AOWF4N60

AOWF450A70TM 700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


AOWF4N60
  AOWF4N60
  AOWF4N60
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top