AOWF4S60 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOWF4S60 datasheet

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AOW4S60/AOWF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW4S60 & AOWF4S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 16A designed to deliver high levels of performance and RDS(ON),max 0.9 robustness in switching applications. Qg,typ 6nC By providing low RDS(on), Qg and EOSS

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AOWF412 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOWF412 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 30A charge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

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AOWF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOWF4N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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aowf450a70.pdf pdf_icon

AOWF450A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

Otros transistores... AOWF14N50 , AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , IRFP260 , AOWF7S65 , AOWF8N50 , AOWF9N70 , AOY2N60 , AOY423 , AOY514 , AOY516 , AOY526 .