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AOWF4S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOWF4S60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.1 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-262F

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AOWF4S60 Datasheet (PDF)

 ..1. Size:284K  aosemi
aowf4s60.pdf

AOWF4S60
AOWF4S60

AOW4S60/AOWF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW4S60 & AOWF4S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 16Adesigned to deliver high levels of performance and RDS(ON),max 0.9robustness in switching applications. Qg,typ 6nCBy providing low RDS(on), Qg and EOSS

 9.1. Size:497K  aosemi
aowf412.pdf

AOWF4S60
AOWF4S60

AOWF412100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 100VThe AOWF412 are fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 30Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.2. Size:302K  aosemi
aowf4n60.pdf

AOWF4S60
AOWF4S60

AOWF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOWF4N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.3. Size:623K  aosemi
aowf450a70.pdf

AOWF4S60
AOWF4S60

AOWF450A70TM 700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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