AOY514 Todos los transistores

 ..1. Size:333K  aosemi
 aoy514.pdf

AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:274K  inchange semiconductor
 aoy514.pdf

isc N-Channel MOSFET Transistor AOY514 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:326K  aosemi
 aoy516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:326K  aosemi
 aod516 aoi516 aoy516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:274K  inchange semiconductor
 aoy516.pdf

isc N-Channel MOSFET Transistor AOY516 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose