2SK436 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK436
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
Encapsulados: CP
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2SK436 datasheet
2sk436.pdf
Ordering number EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2050A Features [2SK436] Large yfs . 0.4 0.16 Ultralow noise figure. 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK436-app
2sk439.pdf
2SK439 Silicon N-Channel MOS FET ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS 5V Drain current ID 30 mA Gate current IG 1mA Channel power dissipation Pch 300 mW Channel
2sk433.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi
Otros transistores... AOY423 , AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR , 2SK3515-01MR , CS150N03A8 , 2SK850 , 2SK3918 , 2SK3918-ZK , 2SK2651-01MR , 2SK2638-01MR , 2SK1916-01R , 2SK1772 , 2SK1070 .
History: SMP730 | AOV11S60 | 4N65L-TF1-T | IPI111N15N3 | HCFL65R210 | MEE7630-G | JCS10N65CT
History: SMP730 | AOV11S60 | 4N65L-TF1-T | IPI111N15N3 | HCFL65R210 | MEE7630-G | JCS10N65CT
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