2SK436 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK436
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
Paquete / Cubierta: CP

Búsqueda de reemplazo de MOSFET 2SK436

2SK436 Datasheet (PDF)

..1. Size:224K sanyo
2sk436.pdf

Ordering number:EN1405BN-Channel Junction Silicon FET2SK436High-Frequency, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit:mm2050AFeatures [2SK436] Large yfs.0.40.16 Ultralow noise figure. 3 Small Crss.0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

9.1. Size:210K 1
2sk430l 2sk430s.pdf

9.2. Size:23K hitachi
2sk439.pdf

2SK439Silicon N-Channel MOS FETADE-208-1172 (Z)1st. EditionMar. 2001ApplicationVHF amplifierOutlineSPAK1. Gate122. Source33. Drain2SK439Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 20 VGate to source voltage VGSS 5VDrain current ID 30 mAGate current IG 1mAChannel power dissipation Pch 300 mWChannel

9.3. Size:181K isahaya
2sk433.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONMarketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 JapanKeep safety first in your circuit designs!ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi

9.4. Size:354K inchange semiconductor
2sk430l.pdf

isc N-Channel MOSFET Transistor 2SK430LFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

9.5. Size:286K inchange semiconductor
2sk430s.pdf

isc N-Channel MOSFET Transistor 2SK430SFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: