2SK1772 Todos los transistores

2SK1772 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK1772 Absolute Ma

2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit mm Superior inter modulation performance. Low noise figure NF = 1.0dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate-source voltage VGS 8 V Drain current ID 30 mA Drain power

2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1.