APT10035JFLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10035JFLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 870 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: SOT227
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APT10035JFLL datasheet
apt10035jfll.pdf
APT10035JFLL 1000V 25A 0.350W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi
apt10035jll.pdf
APT10035JLL 1000V 25A 0.350 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt10035b2fll.pdf
APT10035B2FLL APT10035LFLL 1000V 28A 0.350W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti
apt10035b2llg apt10035lllg.pdf
APT10035B2LL APT10035LLL 1000V 28A 0.350 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al
Otros transistores... APT10026L2FLL , APT10026L2LL , APT10030L2VFR , APT10030L2VR , APT10035B2FLL , APT10035LFLL , APT10035B2LL , APT10035LLL , AO3400A , APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , APT10040B2VFR , APT10040B2VR .
History: APT5030BN | RW1E025RP | WMR07P03TS | AP3C023AMT
History: APT5030BN | RW1E025RP | WMR07P03TS | AP3C023AMT
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