APT1003RKLL Todos los transistores

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APT1003RKLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1003RKLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 139 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 135 pF

Resistencia drenaje-fuente RDS(on): 3 Ohm

Empaquetado / Estuche: TO220

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APT1003RKLL Datasheet (PDF)

1.1. apt1003rkll.pdf Size:92K _apt

APT1003RKLL
APT1003RKLL

APT1003RKLL Ω 1000V 4A 3.00Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-220 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) G and Qg. Power MOS 7® combines lower conduction and switching losses D S along with exceptionally

2.1. apt1003rbll.pdf Size:99K _apt

APT1003RKLL
APT1003RKLL

APT1003RBLL APT1003RSLL Ω 1000V 4A 3.00Ω Ω Ω Ω R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exc

3.1. apt10035jll.pdf Size:60K _apt

APT1003RKLL
APT1003RKLL

APT10035JLL 1000V 25A 0.350 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.2. apt10030l2vfr.pdf Size:79K _apt

APT1003RKLL
APT1003RKLL

APT10030L2VFR 1000V 33A 0.300W POWER MOS V® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Faster Switching D

3.3. apt10035jfll.pdf Size:71K _apt

APT1003RKLL
APT1003RKLL

APT10035JFLL 1000V 25A 0.350W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

3.4. apt10035b2fll.pdf Size:63K _apt

APT1003RKLL
APT1003RKLL

APT10035B2FLL APT10035LFLL 1000V 28A 0.350W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

3.5. apt10030l2vr.pdf Size:77K _apt

APT1003RKLL
APT1003RKLL

APT10030L2VR 1000V 33A 0.300W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

3.6. apt10035b2ll.pdf Size:69K _apt

APT1003RKLL
APT1003RKLL

APT10035B2LL APT10035LLL 1000V 28A 0.350W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

Otros transistores... APT10035B2FLL , APT10035LFLL , APT10035B2LL , APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , BUK455-200A , APT4025BN , APT40M90JN , APT10040B2VFR , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL .

 


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