APT1003RKLL Todos los transistores

 

APT1003RKLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1003RKLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO220

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APT1003RKLL datasheet

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 apt1003rkll.pdf pdf_icon

APT1003RKLL

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

 0.1. Size:89K  apt
 apt1003rkllg.pdf pdf_icon

APT1003RKLL

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

 5.1. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003RKLL

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall

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 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RKLL

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

MOSTRAR MÁS

Otros transistores... APT10035B2FLL , APT10035LFLL , APT10035B2LL , APT10035LLL , APT10035JFLL , APT10035JLL , APT1003RSLL , APT1003RBLL , 7N60 , APT4025BN , APT40M90JN , APT10040B2VFR , APT10040B2VR , APT10045B2FLL , APT10045B2LL , APT10045JFLL , APT10045JLL .

History: G86N06K | SMG2319P | IPD60R600P7 | BTS247Z | SIJ470DP | 2SK3646-01SJ | RZF030P01

 

 

 

 

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