APT10045B2FLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10045B2FLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 570 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Encapsulados: TMAX
Búsqueda de reemplazo de APT10045B2FLL MOSFET
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APT10045B2FLL datasheet
apt10045b2fll.pdf
APT10045B2FLL APT10045LFLL 1000V 23A 0.450W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti
apt10045b2fllg apt10045lfllg.pdf
APT10045B2FLL APT10045LFLL 1000V 23A 0.4 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching l
apt10045b2llg apt10045lllg.pdf
APT10045B2LL APT10045LLL 1000V 23A 0.450 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al
apt10045b2ll.pdf
APT10045B2LL APT10045LLL 1000V 23A 0.450W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast
Otros transistores... APT10035JLL , APT1003RSLL , APT1003RBLL , APT1003RKLL , APT4025BN , APT40M90JN , APT10040B2VFR , APT10040B2VR , IRF9640 , APT10045B2LL , APT10045JFLL , APT10045JLL , APT1004R2KN , APT10050B2LC , APT10050B2VFR , APT10050JLC , BUZ50C .
History: AP3N3R3MT | MS3N80 | H5N50U
History: AP3N3R3MT | MS3N80 | H5N50U
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