APT10050B2VFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10050B2VFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 520 W
Voltaje máximo drenador - fuente |Vds|: 1000 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 335 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 595 pF
Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
Paquete / Cubierta: TMAX
Búsqueda de reemplazo de MOSFET APT10050B2VFR
APT10050B2VFR Datasheet (PDF)
apt10050b2vfr.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifica
apt10050b2vfrg apt10050lvfrg.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR
apt10050b2vr.pdf
APT10050B2VR1000V 21A 0.500POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L
apt10050b2lc.pdf
APT10050B2LCAPT10050LLC1000V 21A 0.500WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fa
apt10050b2 lvfr c.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
