APT10090SLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT10090SLL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 338 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: D3PAK

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APT10090SLL Datasheet (PDF)

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apt10090sll.pdf

APT10090BLLAPT10090SLL1000V 12A 0.900WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchi

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apt10090bllg apt10090sllg.pdf

APT10090BLL APT10090SLL 1000V 12A 0.950BLL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SLLlosses along with exceptionally fa

5.1. Size:206K apt
apt10090bfllg apt10090sfllg.pdf

APT10090BFLL APT10090SFLL 1000V 12A 0.950BFLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-ing losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching SFLLlosses along with exceptiona

6.1. Size:69K apt
apt10090bll.pdf

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apt10090bfll.pdf

APT10090BFLLAPT10090SFLL1000V 12A 0.900WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally

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