HUF75309T3ST Todos los transistores

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HUF75309T3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75309T3ST

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.1 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.07 Ohm

Empaquetado / Estuche: SOT223

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HUF75309T3ST Datasheet (PDF)

1.1. huf75309t3st.pdf Size:180K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET • 3A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.070Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE® M

3.1. huf75307t3st.pdf Size:170K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET • 2.6A, 55V This N-Channel power MOSFET is • Ultra Low On-Resistance, rDS(ON) = 0.090Ω manufactured using the innovative • Diode Exhibits Both High Speed and Soft Recovery UltraFET® process. This advanced process technology achieves the • Temperature Compensating PSPICE

4.1. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

4.2. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the lowest pos

4.3. huf75343.pdf Size:205K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode

4.4. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf Size:331K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

4.5. huf75329d3-s.pdf Size:225K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest pos

4.6. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

4.7. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th

4.8. huf75329g3 huf75329p3 huf75329s3s.pdf Size:252K _fairchild_semi

HUF75309T3ST
HUF75309T3ST

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024? are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on the web at: www.

4.9. huf75344.pdf Size:142K _intersil

HUF75309T3ST
HUF75309T3ST

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S

4.10. huf75332.pdf Size:214K _intersil

HUF75309T3ST
HUF75309T3ST

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance

Otros transistores... HUF75307D3S , HUF75307D3ST , HUF75307P3 , HUF75307T3ST , HUF75309D3 , HUF75309D3S , HUF75309D3ST , HUF75309P3 , J111 , HUF75321D3 , HUF75321D3S , HUF75321D3ST , HUF75321P3 , HUF75321S3 , HUF75321S3S , HUF75321S3ST , HUF75329D3 .

 


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