APT1201R4BLL Todos los transistores

 

APT1201R4BLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1201R4BLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO247

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APT1201R4BLL datasheet

 ..1. Size:69K  apt
apt1201r4bll.pdf pdf_icon

APT1201R4BLL

APT1201R4BLL APT1201R4SLL 1200V 9A 1.400W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switch

 4.1. Size:254K  apt
apt1201r4bfll apt1201r4sfll.pdf pdf_icon

APT1201R4BLL

APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al

 6.1. Size:65K  apt
apt1201r2sll.pdf pdf_icon

APT1201R4BLL

APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switc

 6.2. Size:144K  apt
apt1201r5bvfrg apt1201r5svfrg.pdf pdf_icon

APT1201R4BLL

APT1201R5BVFR APT1201R5SVFR 1200V 10A 1.500 POWER MOS V TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switchi

Otros transistores... APT10090SLL , APT10M09B2VFR , APT10M09B2VR , APT10M30AVR , APT11N80BC3 , APT11N80KC3 , APT1201R2BLL , APT1201R2SLL , IRFB4110 , APT1201R4SLL , APT1201R5BVFR , APT1201R5SVFR , APT1201R6BVFR , APT12031JLL , APT12040JLL , APT12040JVFR , APT12040L2LL .

History: TPC8035-H | HM4606D | TPC8031-H

 

 

 


History: TPC8035-H | HM4606D | TPC8031-H

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