APT12045L2VR Todos los transistores

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 apt12045l2vr.pdf

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 apt12045l2vfrg.pdf

APT12045L2VFR 1200V 28A 0.450 POWER MOS V TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

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 apt12045l2vfr.pdf

APT12045L2VFR 1200V 28A 0.450 POWER MOS V TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalan

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 apt12040l2fllg.pdf

APT12040L2FLL 1200V 30A 0.400 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally

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 apt1204r7bfllg apt1204r7sfllg.pdf

APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along

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 apt12040jvr.pdf

APT12040JVR 1200V 26A 0.400W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

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 apt12040jll.pdf

APT12040JLL 1000V 24A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

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 apt12040jfll.pdf

APT12040JFLL 1200V 24A 0.400 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" ISOTOP along with e

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 apt1204r7kfllg.pdf

APT1204R7KFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptio

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 apt12040l2ll.pdf

APT12040L2LL 1200V 30A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

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 apt12040jvfr.pdf

APT12040JVFR 1200V 26A 0.400 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faste