APT12067B2LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT12067B2LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 565 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm

Encapsulados: TMAX

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APT12067B2LL datasheet

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 apt12067b2ll.pdf pdf_icon

APT12067B2LL

APT12067B2LL APT12067LLL 1200V 18A 0.670W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

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 apt12067b2llg apt12067lllg.pdf pdf_icon

APT12067B2LL

APT12067B2LL APT12067LLL 1200V 18A 0.670 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

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 apt12067b2fllg apt12067lfllg.pdf pdf_icon

APT12067B2LL

APT12067B2FLL APT12067LFLL 1200V 18A 0.670 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses

 6.1. Size:103K  apt
 apt12067jfll.pdf pdf_icon

APT12067B2LL

APT12067JFLL 1200V 17A 0.670 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" ISOTOP along with

MOSTRAR MÁS

Otros transistores... APT12040JVFR, APT12040L2LL, APT12045L2VFR, APT12045L2VR, APT12057B2LL, APT12057JLL, APT12060B2VFR, APT12060B2VR, IRF9540, APT12067JLL, APT12080B2VFR, APT12080JVFR, APT14050JVFR, APT17N80BC3, APT17N80SC3, APT20M10JFLL, APT20M10JLL