APT30M36JLL Todos los transistores

 ..1. Size:69K  apt
 apt30m36jll.pdf

APT30M36JLL 300V 76A 0.036W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

 5.1. Size:168K  apt
 apt30m36jfll.pdf

APT30M36JFLL 300V 76A 0.036 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) "UL Recognized" and Qg. Power MOS 7 combines lower conduction and switching losses ISOTOP along with e

 6.1. Size:170K  apt
 apt30m36b2fll apt30m36lfll.pdf

APT30M36B2FLL APT30M36LFLL 300V 84A 0.036 R FREDFET POWER MOS 7 FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switchin

 6.2. Size:72K  apt
 apt30m36lll apt30m36b2ll.pdf

APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 6.3. Size:69K  apt
 apt30m36b2ll.pdf

APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s

 6.4. Size:376K  inchange semiconductor
 apt30m36b2fll.pdf

isc N-Channel MOSFET Transistor APT30M36B2FLL FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 6.5. Size:255K  inchange semiconductor
 apt30m36lll.pdf

isc N-Channel MOSFET Transistor APT30M36LLL FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 6.6. Size:256K  inchange semiconductor
 apt30m36lfll.pdf

isc N-Channel MOSFET Transistor APT30M36LFLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.03 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 6.7. Size:376K  inchange semiconductor
 apt30m36b2ll.pdf

isc N-Channel MOSFET Transistor APT30M36B2LL FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p