HUF75321S3 Todos los transistores

 

HUF75321S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75321S3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 709 pF

Resistencia drenaje-fuente RDS(on): 0.032 Ohm

Empaquetado / Estuche: TP262AA

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HUF75321S3 Datasheet (PDF)

1.1. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi

HUF75321S3
HUF75321S3

HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the lowest pos

3.1. huf75329d3st.pdf Size:660K _update_mosfet

HUF75321S3
HUF75321S3

HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou

3.2. huf75329d3-s.pdf Size:225K _fairchild_semi

HUF75321S3
HUF75321S3

HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest pos

 3.3. huf75329g3 huf75329p3 huf75329s3s.pdf Size:252K _fairchild_semi

HUF75321S3
HUF75321S3

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024? are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on the web at: www.

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