APT5010B2LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT5010B2LCAPT5010LLC500V 47A 0.100WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss andCrss. Lower gate charge coupled with Power MOS VITM optimized gateLLClayout, delivers exceptionally fast

APT5010B2LC500V 47A 0.100 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageT-MAXN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and C .rssLower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.D L

APT5010B2LLAPT5010LLL500V 46A 0.100B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

APT5010B2LLAPT5010LLL500V 46A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

isc N-Channel MOSFET Transistor APT5010B2LLFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp