APT5014B2LC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5014B2LC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 450 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TMAX

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APT5014B2LC datasheet

 ..1. Size:33K  apt
 apt5014b2lc.pdf pdf_icon

APT5014B2LC

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast

 5.1. Size:55K  apt
 apt5014b2vrg.pdf pdf_icon

APT5014B2LC

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo

 5.2. Size:62K  apt
 apt5014b2vr.pdf pdf_icon

APT5014B2LC

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo

 5.3. Size:114K  apt
 apt5014b2vfrg apt5014lvfrg.pdf pdf_icon

APT5014B2LC

APT5014B2VFR APT5014LVFR 500V 37A 0.140 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

MOSTRAR MÁS

Otros transistores... APT5010B2FLL, APT5010B2LC, APT5010B2LL, APT5010JFLL, APT5010JLC, APT5010JLL, APT5010JVRU2, APT5010JVRU3, IRF2807, APT5014BFLL, APT5014BLL, APT5016BFLL, APT5016BLL, APT5017BLC, APT5018BFLL, APT5018BLL, APT5020BLC