APT5018BFLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5018BFLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO247

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APT5018BFLL datasheet

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 apt5018bfll.pdf pdf_icon

APT5018BFLL

APT5018BFLL APT5018SFLL 500V 27A 0.180W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

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APT5018BFLL

isc N-Channel MOSFET Transistor APT5018BFLL FEATURES Drain Current I =27A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

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 apt5018bfllg apt5018sfllg.pdf pdf_icon

APT5018BFLL

APT5018BFLL APT5018SFLL 500V 27A 0.180 BLL R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL al

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 apt5018bll.pdf pdf_icon

APT5018BFLL

APT5018BLL APT5018SLL 500V 27A 0.180W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

MOSTRAR MÁS

Otros transistores... APT5010JVRU2, APT5010JVRU3, APT5014B2LC, APT5014BFLL, APT5014BLL, APT5016BFLL, APT5016BLL, APT5017BLC, 75N75, APT5018BLL, APT5020BLC, APT5024BFLL, APT5024SVR, APT5027BVR, APT50M50JFLL, APT50M50JLC, APT50M50L2FLL