HUF75329D3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75329D3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 128 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO251AA
Búsqueda de reemplazo de HUF75329D3 MOSFET
HUF75329D3 datasheet
huf75329d3st.pdf
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured using Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou
huf75329d3-s.pdf
HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the
huf75329d3s.pdf
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, resulting in o
Otros transistores... HUF75309T3ST , HUF75321D3 , HUF75321D3S , HUF75321D3ST , HUF75321P3 , HUF75321S3 , HUF75321S3S , HUF75321S3ST , AON6380 , HUF75329D3S , HUF75329G3 , HUF75329P3 , HUF75329S3 , HUF75329S3S , HUF75329S3ST , HUF75332G3 , HUF75332P3 .
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