APT50M75JLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M75JLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 1040 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT50M75JLL MOSFET
APT50M75JLL Datasheet (PDF)
apt50m75jll.pdf

APT50M75JLL500V 52A 0.075 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt50m75jllu2.pdf

APT50M75JLLU2APT50M75JLLU2500V 51A 0.075WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inher
apt50m75jfll.pdf

APT50M75JFLL500V 52A 0.075WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit
apt50m75b2ll.pdf

APT50M75B2LLAPT50M75LLL500V 57A 0.075WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
Otros transistores... APT50M60L2VR , APT50M65B2FLL , APT50M65B2LL , APT50M65JFLL , APT50M65JLL , APT50M75B2FLL , APT50M75B2LL , APT50M75JFLL , AO4468 , APT50M75JLLU2 , APT50M80B2LC , APT50M80B2VFR , APT50M80B2VR , APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN .
History: MMFT60R195PCTH | SKI10195 | NCE1505S | IRLML0100 | AFC1539 | NCE0208KA | PS75N75A
History: MMFT60R195PCTH | SKI10195 | NCE1505S | IRLML0100 | AFC1539 | NCE0208KA | PS75N75A



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