APT50M75JLLU2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50M75JLLU2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 465 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de APT50M75JLLU2 MOSFET
Principales características: APT50M75JLLU2
apt50m75jllu2.pdf
APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inher
apt50m75jll.pdf
APT50M75JLL 500V 52A 0.075 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt50m75jfll.pdf
APT50M75JFLL 500V 52A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit
apt50m75b2ll.pdf
APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
Otros transistores... APT50M65B2FLL , APT50M65B2LL , APT50M65JFLL , APT50M65JLL , APT50M75B2FLL , APT50M75B2LL , APT50M75JFLL , APT50M75JLL , IRFP064N , APT50M80B2LC , APT50M80B2VFR , APT50M80B2VR , APT50M80JLC , APT50M85B2VFR , APT50M85B2VR , APT5560AN , APT6010B2LL .
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