APT50M75JLLU2 Todos los transistores

 

APT50M75JLLU2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT50M75JLLU2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 465 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 1200 pF

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: SOT227

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APT50M75JLLU2 Datasheet (PDF)

1.1. apt50m75jllu2.pdf Size:124K _apt

APT50M75JLLU2
APT50M75JLLU2

APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inher

1.2. apt50m75jll.pdf Size:60K _apt

APT50M75JLLU2
APT50M75JLLU2

APT50M75JLL 500V 52A 0.075 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 1.3. apt50m75jfll.pdf Size:62K _apt

APT50M75JLLU2
APT50M75JLLU2

APT50M75JFLL 500V 52A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

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