APT6010B2LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT6010B2LLAPT6010LLL600V 54A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

isc N-Channel MOSFET Transistor APT6010B2LLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

600V 54A 0.100APT6010B2LL APT6010LLLAPT6010B2LL* APT6010LLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(O

600V 54A 0.100APT6010B2FLL APT6010LFLLAPT6010B2FLL* APT6010LFLLG**G Denotes RoHS Compliant, Pb Free Terminal Finish.R B2FLL POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering

isc N-Channel MOSFET Transistor APT6010B2FLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur