APT6010B2LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6010B2LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 690 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TMAX
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APT6010B2LL datasheet
apt6010b2ll.pdf
APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi
apt6010b2ll.pdf
isc N-Channel MOSFET Transistor APT6010B2LL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt6010b2llg apt6010lllg.pdf
600V 54A 0.100 APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(O
apt6010b2fllg apt6010lfllg.pdf
600V 54A 0.100 APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2FLL POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
Otros transistores... APT50M75JLLU2, APT50M80B2LC, APT50M80B2VFR, APT50M80B2VR, APT50M80JLC, APT50M85B2VFR, APT50M85B2VR, APT5560AN, IRF540N, APT6010JFLL, APT6010JLL, APT6011B2VFR, APT6011B2VR, APT6011LVFR, APT6011LVR, APT6013B2FLL, APT6013B2LL
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