APT6011LVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6011LVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 990 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: TO264
Búsqueda de reemplazo de APT6011LVR MOSFET
APT6011LVR Datasheet (PDF)
apt6011lvr.pdf

APT6011B2VRAPT6011LVR600V 49A 0.110WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifications
apt6011b2vfrg apt6011lvfrg.pdf

APT6011B2VFRAPT6011LVFR600V 49A 0.110B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt6011lvfr.pdf

APT6011LVFR600V 49A 0.110WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
apt6011b2vr.pdf

APT6011B2VRAPT6011LVR600V 49A 0.110B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR
Otros transistores... APT50M85B2VR , APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , APT6011B2VFR , APT6011B2VR , APT6011LVFR , IRF1404 , APT6013B2FLL , APT6013B2LL , APT6013JFLL , APT6013JLL , APT6015LVFR , APT6017B2FLL , APT6017B2LL , APT6017JFLL .
History: IRLZ34N | STD10NF10 | CPH6443 | 2SK3326 | S85N16RP | 2SJ517 | IRL3103D2
History: IRLZ34N | STD10NF10 | CPH6443 | 2SK3326 | S85N16RP | 2SJ517 | IRL3103D2



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