APT6013B2LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6013B2LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 565 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1010 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TMAX

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APT6013B2LL datasheet

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 apt6013b2ll.pdf pdf_icon

APT6013B2LL

APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

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 apt6013b2ll.pdf pdf_icon

APT6013B2LL

isc N-Channel MOSFET Transistor APT6013B2LL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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 apt6013b2llg apt6013lllg.pdf pdf_icon

APT6013B2LL

APT6013B2LL APT6013LLL 600V 43A 0.130 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

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 apt6013b2fll.pdf pdf_icon

APT6013B2LL

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

MOSTRAR MÁS

Otros transistores... APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, APT6011B2VR, APT6011LVFR, APT6011LVR, APT6013B2FLL, IRFB4110, APT6013JFLL, APT6013JLL, APT6015LVFR, APT6017B2FLL, APT6017B2LL, APT6017JFLL, APT6017JLL, APT6021BFLL