APT6015LVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6015LVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO264

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APT6015LVFR datasheet

 ..1. Size:59K  apt
apt6015lvfr.pdf pdf_icon

APT6015LVFR

APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

 ..2. Size:255K  inchange semiconductor
apt6015lvfr.pdf pdf_icon

APT6015LVFR

isc N-Channel MOSFET Transistor APT6015LVFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 0.1. Size:113K  apt
apt6015b2vfrg apt6015lvfrg.pdf pdf_icon

APT6015LVFR

APT6015B2VFR APT6015LVFR 600V 38A 0.150 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 5.1. Size:62K  apt
apt6015lvr.pdf pdf_icon

APT6015LVFR

APT6015LVR 600V 38A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. D Faster Switching 100% Avalanche Tested Lowe

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