APT6017JFLL Todos los transistores

 

APT6017JFLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6017JFLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 375 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 31 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 760 pF

Resistencia drenaje-fuente RDS(on): 0.17 Ohm

Empaquetado / Estuche: SOT227

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APT6017JFLL Datasheet (PDF)

1.1. apt6017jfll.pdf Size:70K _apt

APT6017JFLL
APT6017JFLL

APT6017JFLL 600V 31A 0.170W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

2.1. apt6017jll.pdf Size:69K _apt

APT6017JFLL
APT6017JFLL

APT6017JLL 600V 31A 0.170W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

 3.1. apt6017b2fllg apt6017lfllg.pdf Size:162K _update_mosfet

APT6017JFLL
APT6017JFLL

APT6017B2FLL APT6017LFLL Ω 600V 35A 0.170Ω Ω Ω Ω B2FLL R POWER MOS 7 FREDFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses L

3.2. apt6017b2llg apt6017lllg.pdf Size:161K _update_mosfet

APT6017JFLL
APT6017JFLL

APT6017B2LL APT6017LLL Ω 600V 35A 0.170Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along

 3.3. apt6017wvr.pdf Size:60K _apt

APT6017JFLL
APT6017JFLL

APT6017WVR 600V 31.5A 0.170Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

3.4. apt6017b2fll.pdf Size:70K _apt

APT6017JFLL
APT6017JFLL

APT6017B2FLL APT6017LFLL 600V 35A 0.017W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 3.5. apt6017b2ll.pdf Size:69K _apt

APT6017JFLL
APT6017JFLL

APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

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