APT6060BNR Todos los transistores

 

APT6060BNR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT6060BNR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 240 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 286 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO247

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APT6060BNR Datasheet (PDF)

1.1. apt6060bnr.pdf Size:172K _apt

APT6060BNR
APT6060BNR



3.1. apt5570an apt6060an apt6070an.pdf Size:382K _update_mosfet

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APT6060BNR



 5.1. apt60m75l2llg.pdf Size:162K _update_mosfet

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APT6060BNR

APT60M75L2LL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fa

5.2. apt6013b2llg apt6013lllg.pdf Size:200K _update_mosfet

APT6060BNR
APT6060BNR

APT6013B2LL APT6013LLL Ω 600V 43A 0.130Ω Ω Ω Ω B2LL R POWER MOS 7 MOSFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses LLL

 5.3. apt6010b2llg apt6010lllg.pdf Size:258K _update_mosfet

APT6060BNR
APT6060BNR

Ω 600V 54A 0.100Ω Ω Ω Ω APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(O

5.4. apt6025bfllg apt6025sfllg.pdf Size:162K _update_mosfet

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APT6060BNR

APT6025BFLL APT6025SFLL Ω 600V 24A 0.250Ω Ω Ω Ω BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

 5.5. apt6021bllg.pdf Size:163K _update_mosfet

APT6060BNR
APT6060BNR

APT6021BLL APT6021SLL Ω 600V 29A 0.210Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.6. apt6035bvfrg apt6035svfrg.pdf Size:117K _update_mosfet

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APT6060BNR

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

5.7. apt6029bfllg apt6029sfllg.pdf Size:160K _update_mosfet

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APT6060BNR

APT6029BFLL APT6029SFLL Ω 600V 21A 0.290Ω Ω Ω Ω BFLL R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

5.8. apt6013b2fllg apt6013lfllg.pdf Size:142K _update_mosfet

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APT6013B2FLL APT6013LFLL Ω 600V 43A 0.130Ω Ω Ω Ω B2FLL R POWER MOS 7 FREDFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses L

5.9. apt6038bfllg apt6038sfllg.pdf Size:162K _update_mosfet

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APT6060BNR

APT6038BFLL APT6038SFLL Ω 600V 17A 0.380Ω Ω Ω Ω R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL a

5.10. apt6045bvfrg apt6045svfrg.pdf Size:132K _update_mosfet

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APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhance- D3PAK ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V® also achieves

5.11. apt60n90jc3.pdf Size:147K _update_mosfet

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 900V 60A APT60N90JC3 COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg "UL Recognized" ISOTOP® file # E145592 • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET

5.12. apt6015jvfr.pdf Size:136K _update_mosfet

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APT6060BNR

 APT6015JVFR 600V 35A 0.150W FREDFET POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhance- ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® file # E145592 • Faster S

5.13. apt60n60bcsg.pdf Size:207K _update_mosfet

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 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B) COOLMOS Po we r Se miconduc tors D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated • Extreme dv/dt Rated G • Popular TO-247 or Surface Mount D3 Package

5.14. apt6017b2fllg apt6017lfllg.pdf Size:162K _update_mosfet

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APT6017B2FLL APT6017LFLL Ω 600V 35A 0.170Ω Ω Ω Ω B2FLL R POWER MOS 7 FREDFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses L

5.15. apt6010b2fllg apt6010lfllg.pdf Size:259K _update_mosfet

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Ω 600V 54A 0.100Ω Ω Ω Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2FLL POWER MOS 7 FREDFET T-MAX™ TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering

5.16. apt60m80l2vfrg.pdf Size:160K _update_mosfet

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APT60M80L2VFR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX P

5.17. apt60m80l2vrg.pdf Size:160K _update_mosfet

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APT60M80L2VR Ω 600V 65A 0.080Ω Ω Ω Ω POWER MOS V® MOSFET L2VR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pack

5.18. apt6011b2vfrg apt6011lvfrg.pdf Size:147K _update_mosfet

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APT6011B2VFR APT6011LVFR Ω 600V 49A 0.110Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

5.19. apt6018jn.pdf Size:55K _update_mosfet

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D G APT6015JN 600V 38.0A 0.15Ω S APT6018JN 600V 35.0A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

5.20. apt6029sll apt6029sllg.pdf Size:160K _update_mosfet

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APT6029BLL APT6029SLL Ω 600V 21A 0.290Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.21. apt6033bn.pdf Size:47K _update_mosfet

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D TO-247 G APT6030BN 600V 23.0A 0.30Ω S APT6033BN 600V 22.0A 0.33Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V

5.22. apt6025bllg.pdf Size:160K _update_mosfet

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APT6025BLL APT6025SLL Ω 600V 24A 0.250Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.23. apt6040svfr.pdf Size:106K _update_mosfet

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Ω 600V 16A 0.40Ω Ω Ω Ω APT6040BVFR APT6040SVFR APT6040BVFRG*APT6040SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS

5.24. apt6021bfllg apt6021sfllg.pdf Size:164K _update_mosfet

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APT6021BFLL APT6021SFLL Ω 600V 29A 0.210Ω Ω Ω Ω R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

5.25. apt6025bvfrg apt6025svfrg.pdf Size:116K _update_mosfet

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APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

5.26. apt6040svr.pdf Size:58K _update_mosfet

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APT6040BVR APT6040SVR Ω 600V 16A 0.400Ω Ω Ω Ω BVR POWER MOS V® D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVR also achieves faster switching speeds through optimized gate layout. D • Fast

5.27. apt6015b2vfrg apt6015lvfrg.pdf Size:113K _update_mosfet

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APT6015B2VFR APT6015LVFR Ω Ω 600V 38A 0.150Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

5.28. apt6017b2llg apt6017lllg.pdf Size:161K _update_mosfet

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APT6017B2LL APT6017LLL Ω 600V 35A 0.170Ω Ω Ω Ω R B2LL POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along

5.29. apt6025bvrg.pdf Size:49K _update_mosfet

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APT6060BNR

APT6025BVR 600V 25A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.30. apt6045bn.pdf Size:56K _update_mosfet

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D TO-247 G APT6040BN 600V 18.0A 0.40Ω S APT6045BN 600V 17.0A 0.45Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

5.31. apt60m75jvfr.pdf Size:196K _update_mosfet

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APT60M75JVFR Ω 600V 62A 0.075Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Faster

5.32. apt60m75l2fllg.pdf Size:153K _update_mosfet

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APT60M75L2FLL Ω 600V 73A 0.075Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

5.33. apt6038bllg apt6038sllg.pdf Size:161K _update_mosfet

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APT6038BLL APT6038SLL Ω 600V 17A 0.380Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

5.34. apt6013jll.pdf Size:69K _apt

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APT6013JLL 600V 39A 0.130W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

5.35. apt60gt60jr.pdf Size:30K _apt

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APT60GT60JR 600V 90A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Switching to 150KHz C • Low Tail Current • Ultra Low Leakage Current • Avalanche

5.36. apt6015jn.pdf Size:62K _apt

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D G APT6015JN 600V 38.0A 0.15Ω S APT6018JN 600V 35.0A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

5.37. apt6040bvfr.pdf Size:113K _apt

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APT6040BVFR APT6040SVFR Ω 600V 16A 0.400Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

5.38. apt6038bfll.pdf Size:71K _apt

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APT6060BNR

APT6038BFLL APT6038SFLL 600V 17A 0.380W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.39. apt6040.pdf Size:50K _apt

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D TO-247 G APT6040BN 600V 18.0A 0.40Ω S APT6045BN 600V 17.0A 0.45Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

5.40. apt6029bll.pdf Size:69K _apt

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APT6060BNR

APT6029BLL APT6029SLL 600V 21A 0.290W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.41. apt6025bfll.pdf Size:71K _apt

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APT6060BNR

APT6025BFLL APT6025SFLL 600V 24A 0.250W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.42. apt60m90jn.pdf Size:60K _apt

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D G APT60M90JN 600V 57A 0.090Ω S "UL Recognized" File No. E145592 (S) ISOTOP® SINGLE DIE ISOTOP® PACKAGE POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 60M90JN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 57 Amps IDM, lLM Pulse

5.43. apt6020lvr.pdf Size:64K _apt

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APT6020LVR 600V 30A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Lower

5.44. apt6030bvr.pdf Size:61K _apt

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APT6060BNR

APT6030BVR 600V 21A 0.300Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.45. apt6035svr.pdf Size:65K _apt

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APT6035SVR 600V 18A 0.350Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.46. apt6021bfll.pdf Size:71K _apt

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APT6060BNR

APT6021BFLL APT6021SFLL 600V 29A 0.210W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.47. apt6021bll.pdf Size:69K _apt

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APT6060BNR

APT6021BLL APT6021SLL 600V 29A 0.210W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.48. apt6030.pdf Size:62K _apt

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APT6030BVFR 600V 21A 0.300W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested

5.49. apt6037hvr.pdf Size:61K _apt

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APT6037HVR 600V 15.5A 0.370Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

5.50. apt6032avr.pdf Size:61K _apt

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APT6032AVR 600V 17.5A 0.320Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.51. apt60m75jvr.pdf Size:73K _apt

APT6060BNR
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APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

5.52. apt6015.pdf Size:60K _apt

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APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.53. apt60m80l2vr.pdf Size:77K _apt

APT6060BNR
APT6060BNR

APT60M80L2VR 600V 65A 0.080W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

5.54. apt6025bll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6025BLL APT6025SLL 600V 24A 0.250W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.55. apt6035bvfr.pdf Size:116K _apt

APT6060BNR
APT6060BNR

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

5.56. apt6017wvr.pdf Size:60K _apt

APT6060BNR
APT6060BNR

APT6017WVR 600V 31.5A 0.170Ω POWER MOS V® TO-267 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

5.57. apt6011b2vr.pdf Size:143K _apt

APT6060BNR
APT6060BNR

APT6011B2VR APT6011LVR Ω 600V 49A 0.110Ω Ω Ω Ω B2VR POWER MOS V® MOSFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR

5.58. apt6025svfr.pdf Size:113K _apt

APT6060BNR
APT6060BNR

APT6025BVFR APT6025SVFR Ω 600V 25A 0.250Ω Ω Ω Ω POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Re

5.59. apt6011lvr.pdf Size:37K _apt

APT6060BNR
APT6060BNR

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specifications

5.60. apt60gt60jrd.pdf Size:75K _apt

APT6060BNR
APT6060BNR

APT60GT60JRD 600V 90A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Swi

5.61. apt6015lvr.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6015LVR 600V 38A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. D • Faster Switching • 100% Avalanche Tested • Lowe

5.62. apt6013b2fll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

5.63. apt6017jll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6017JLL 600V 31A 0.170W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

5.64. apt6029bfll.pdf Size:71K _apt

APT6060BNR
APT6060BNR

APT6029BFLL APT6029SFLL 600V 21A 0.290W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

5.65. apt6013jvr.pdf Size:71K _apt

APT6060BNR
APT6060BNR

APT6013JVR 600V 40A 0.130Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanch

5.66. apt6011b2vfr.pdf Size:33K _apt

APT6060BNR
APT6060BNR

APT6011B2VFR 600V 49A 0.110W POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Te

5.67. apt6040bvr.pdf Size:57K _apt

APT6060BNR
APT6060BNR

APT6040BVR APT6040SVR Ω 600V 16A 0.400Ω Ω Ω Ω BVR POWER MOS V® D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVR also achieves faster switching speeds through optimized gate layout. D • Fast

5.68. apt60m75jll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT60M75JLL 600V 58A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

5.69. apt60m75l2ll.pdf Size:64K _apt

APT6060BNR
APT6060BNR

APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

5.70. apt6045bvr.pdf Size:63K _apt

APT6060BNR
APT6060BNR

APT6045BVR 600V 15A 0.450Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.71. apt6010jfll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6010JFLL 600V 47A 0.100W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

5.72. apt6025bvr.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6025BVR 600V 25A 0.250Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.73. apt60m75pvr.pdf Size:36K _apt

APT6060BNR
APT6060BNR

APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.74. apt6013b2ll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

5.75. apt60gu30b.pdf Size:162K _apt

APT6060BNR
APT6060BNR

TYPICAL PERFORMANCE CURVES APT60GU30B_S APT60GU30B APT60GU30S 300V ® POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. D3PAK Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C switchmode power supplies. G E G C • Low Conductio

5.76. apt60m60jll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT60M60JLL 600V 70A 0.060W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

5.77. apt6017b2fll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6017B2FLL APT6017LFLL 600V 35A 0.017W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

5.78. apt6010b2ll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

5.79. apt6015jvr.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6015JVR 600V 35A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

5.80. apt6038bll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6038BLL APT6038SLL 600V 17A 0.380W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

5.81. apt60m75.pdf Size:73K _apt

APT6060BNR
APT6060BNR

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

5.82. apt6035bn.pdf Size:49K _apt

APT6060BNR
APT6060BNR

D TO-247 G APT6035BN 600V 19.0A 0.35Ω S POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage ±30 Volts Total Power Dissi

5.83. apt6035avr.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

5.84. apt6027hvr.pdf Size:61K _apt

APT6060BNR
APT6060BNR

APT6027HVR 600V 20A 0.270Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

5.85. apt6010jll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6010JLL 600V 47A 0.100W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U

5.86. apt60gf120jrd.pdf Size:52K _apt

APT6060BNR
APT6060BNR

APT60GF120JRD 1200V 100A Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT™ combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Switching to 20KHz C •

5.87. apt60m60jfll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT60M60JFLL 600V 70A 0.060W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.88. apt6030bvfr.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6030BVFR 600V 21A 0.300W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested

5.89. apt6030bn.pdf Size:51K _apt

APT6060BNR
APT6060BNR

D TO-247 G APT6030BN 600V 23.0A 0.30Ω S APT6033BN 600V 22.0A 0.33Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6030BN 6033BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 23 22 Amps IDM Pulsed Drain Current 1 92 88 V

5.90. apt6035bvr.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6035BVR 600V 18A 0.350Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

5.91. apt60gf60ju2.pdf Size:523K _apt

APT6060BNR
APT6060BNR

APT60GF60JU2 ISOTOP® Boost chopper VCES = 600V IC = 60A @ Tc = 95°C NPT IGBT Application • AC and DC motor control K • Switched Mode Power Supplies • Power Factor Correction • Brake switch C Features • Non Punch Through (NPT) THUNDERBOLT IGBT® G - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - L

5.92. apt60m75l2fll.pdf Size:65K _apt

APT6060BNR
APT6060BNR

APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

5.93. apt60m75jfll.pdf Size:71K _apt

APT6060BNR
APT6060BNR

APT60M75JFLL 600V 58A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

5.94. apt60gf60ju3.pdf Size:523K _apt

APT6060BNR
APT6060BNR

APT60GF60JU3 ISOTOP® Buck chopper VCES = 600V IC = 60A @ Tc = 95°C NPT IGBT C Application • AC and DC motor control • Switched Mode Power Supplies G Features • Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop E - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current A - Avala

5.95. apt6035.pdf Size:62K _apt

APT6060BNR
APT6060BNR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

5.96. apt6017jfll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6017JFLL 600V 31A 0.170W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

5.97. apt6011lvfr.pdf Size:33K _apt

APT6060BNR
APT6060BNR

APT6011LVFR 600V 49A 0.110W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Teste

5.98. apt6015b2vr.pdf Size:60K _apt

APT6060BNR
APT6060BNR

APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

5.99. apt6045svr.pdf Size:65K _apt

APT6060BNR
APT6060BNR

APT6045SVR 600V 15A 0.450Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

5.100. apt6013jfll.pdf Size:70K _apt

APT6060BNR
APT6060BNR

APT6013JFLL 600V 39A 0.130W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with

5.101. apt6017b2ll.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

5.102. apt6030svr.pdf Size:112K _apt

APT6060BNR
APT6060BNR

APT6030BVR APT6030SVR Ω 600V 21A 0.300Ω Ω Ω Ω BVR POWER MOS V® MOSFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVR •

5.103. apt6015lvfr.pdf Size:59K _apt

APT6060BNR
APT6060BNR

APT6015LVFR 600V 38A 0.150W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Teste

5.104. apt6030svfr.pdf Size:136K _apt

APT6060BNR
APT6060BNR

APT6030BVFR APT6030SVFR Ω 600V 21A 0.300Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

5.105. apt60m80jvr.pdf Size:69K _apt

APT6060BNR
APT6060BNR

APT60M80JVR Ω 600V 55A 0.080Ω Ω Ω Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Popular SOT-227

5.106. apt6025bvfr.pdf Size:72K _apt

APT6060BNR
APT6060BNR

APT6025BVFR 600V 25A 0.250Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

5.107. apt6045cvr.pdf Size:61K _apt

APT6060BNR
APT6060BNR

APT6045CVR 600V 11.8A 0.450Ω POWER MOS V® TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested

5.108. apt6025svr.pdf Size:59K _apt

APT6060BNR
APT6060BNR

APT6025SVR 600V 25A 0.250W POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower Le

5.109. apt60gt60br.pdf Size:24K _apt

APT6060BNR
APT6060BNR

APT60GT60BR 600V 116A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. G • Low Forward Voltage Drop • High Freq. Switching to 150KHz C C E • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated

5.110. apt6040bn.pdf Size:50K _apt

APT6060BNR
APT6060BNR

D TO-247 G APT6040BN 600V 18.0A 0.40Ω S APT6045BN 600V 17.0A 0.45Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6040BN 6045BN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Current @ TC = 25°C 18 17 Amps IDM Pulsed Drain Current 1 72 68 V

5.111. apt60gt60jr.pdf Size:39K _igbt_a

APT6060BNR
APT6060BNR

APT60GT60JR 600V 90A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Switching to 150KHz C • Low Tail Current • Ultra Low Leakage Current • Avalanche

5.112. apt60ga60jd60.pdf Size:351K _igbt_a

APT6060BNR
APT6060BNR

APT60GA60JD60 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity

5.113. apt60gt60brg.pdf Size:676K _igbt_a

APT6060BNR
APT6060BNR

 APT60GT60BRG APT60GT60SRG 600V ® (B) Thunderbolt IGBT D3PAK The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. (S) Using Non-Punch Through Technology the Thunderbolt IGBT® offers superior C G E ruggedness and ultrafast switching speed. G C • Low Forward Voltage Drop • High Freq. Switching to 150KHz E • Low Tail Current • Ultra Low Leakage Curre

5.114. apt60gf120jrdq3.pdf Size:447K _igbt_a

APT6060BNR
APT6060BNR

TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 1200V APT60GF120JRDQ3 ® FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP® file # E145592 • Low Forwa

5.115. apt60gt60srg.pdf Size:676K _igbt_a

APT6060BNR
APT6060BNR

 APT60GT60BRG APT60GT60SRG 600V ® (B) Thunderbolt IGBT D3PAK The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. (S) Using Non-Punch Through Technology the Thunderbolt IGBT® offers superior C G E ruggedness and ultrafast switching speed. G C • Low Forward Voltage Drop • High Freq. Switching to 150KHz E • Low Tail Current • Ultra Low Leakage Curre

5.116. apt60gt60jrdq3.pdf Size:334K _igbt_a

APT6060BNR
APT6060BNR

TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 600V APT60GT60JRDQ3 ® Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® file # E145592 • Low Forward Voltage Drop • High Freq. Switching to 100KHz •

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
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