APT77N60JC3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT77N60JC3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 568 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 77 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 4400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT227

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APT77N60JC3 datasheet

 ..1. Size:175K  apt
 apt77n60jc3.pdf pdf_icon

APT77N60JC3

APT77N60JC3 600V 77A 0.035 Super Junction MOSFET COOLMOS Power Semiconductors Ultra low RDS(ON) "UL Recognized" Low Miller Capacitance ISOTOP Ultra Low Gate Charge, Qg D Avalanche Energy Rated N-Channel Enhancement Mode G Popular SOT-227 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter

 6.1. Size:144K  microsemi
 apt77n60bc6 apt77n60sc6.pdf pdf_icon

APT77N60JC3

APT77N60BC6 APT77N60SC6 600V 77A 0.041 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated D Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die TC = 25 C unless otherwise specified. Symbol Parame

 6.2. Size:376K  inchange semiconductor
 apt77n60bc6.pdf pdf_icon

APT77N60JC3

isc N-Channel MOSFET Transistor APT77N60BC6 FEATURES Drain Current I =77A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.041 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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