APT8014JFLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT8014JFLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 595 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 1480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de MOSFET APT8014JFLL
Principales características: APT8014JFLL
apt8014jfll.pdf
APT8014JFLL 800V 42A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with
apt8014jll.pdf
APT8014JLL 800V 42A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "U
apt8014l2fll.pdf
APT8014L2FLL 800V 52A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds
apt8014l2ll.pdf
APT8014L2LL 800V 52A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent w
Otros transistores... APT60M75JLL , APT60M75L2FLL , APT60M75L2LL , APT60M80JVR , APT60M80L2VR , APT77N60JC3 , APT8011JFLL , APT8011JLL , IRF530 , APT8014JLL , APT8014L2FLL , APT8014L2LL , APT8018L2VFR , APT8018L2VR , APT8020B2FLL , APT8020B2LL , APT8020JFLL .
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