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APT8014L2FLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8014L2FLL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 890 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 52 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 19 nS

Conductancia de drenaje-sustrato (Cd): 1480 pF

Resistencia drenaje-fuente RDS(on): 0.14 Ohm

Empaquetado / Estuche: TO264

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APT8014L2FLL Datasheet (PDF)

1.1. apt8014l2fllg.pdf Size:242K _update_mosfet

APT8014L2FLL
APT8014L2FLL

Ω 800V 52A 0.16Ω Ω Ω Ω APT8014L2FLL APT8014L2FLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 FREDFET TO-264 Max Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combine

1.2. apt8014l2fll.pdf Size:65K _apt

APT8014L2FLL
APT8014L2FLL

APT8014L2FLL 800V 52A 0.140W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

 1.3. apt8014l2ll.pdf Size:64K _apt

APT8014L2FLL
APT8014L2FLL

APT8014L2LL 800V 52A 0.140W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent w

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