APT8018L2VR Todos los transistores

 

APT8018L2VR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8018L2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 830 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 610 nC

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 1090 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TO264

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APT8018L2VR Datasheet (PDF)

1.1. apt8018l2vfrg.pdf Size:133K _update_mosfet

APT8018L2VR
APT8018L2VR

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

1.2. apt8018l2vfr.pdf Size:131K _apt

APT8018L2VR
APT8018L2VR

APT8018L2VFR Ω 800V 43A 0.180Ω Ω Ω Ω L2VFR POWER MOS V® FREDFET TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Pa

 1.3. apt8018l2vr.pdf Size:77K _apt

APT8018L2VR
APT8018L2VR

APT8018L2VR 800V 43A 0.180W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D •

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