APT8024B2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8024B2VR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TMAX

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APT8024B2VR datasheet

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apt8024b2vr.pdf pdf_icon

APT8024B2VR

APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications

 4.1. Size:39K  apt
apt8024b2vfr.pdf pdf_icon

APT8024B2VR

APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp

 4.2. Size:137K  apt
apt8024b2vfrg apt8024lvfrg.pdf pdf_icon

APT8024B2VR

APT8024B2VFR APT8024LVFR 800V 33A 0.240 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

 5.1. Size:70K  apt
apt8024b2fll.pdf pdf_icon

APT8024B2VR

APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

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