APT8024B2VR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT8024B2VR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 750 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: TMAX
Búsqueda de reemplazo de APT8024B2VR MOSFET
- Selecciónⓘ de transistores por parámetros
APT8024B2VR datasheet
apt8024b2vr.pdf
APT8024B2VR APT8024LVR 800V 33A 0.240W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications
apt8024b2vfr.pdf
APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp
apt8024b2vfrg apt8024lvfrg.pdf
APT8024B2VFR APT8024LVFR 800V 33A 0.240 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
apt8024b2fll.pdf
APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona
Otros transistores... APT8018L2VR, APT8020B2FLL, APT8020B2LL, APT8020JFLL, APT8020JLL, APT8024B2FLL, APT8024B2LL, APT8024B2VFR, 10N65, APT8024JFLL, APT8024JLL, APT8043BFLL, APT8043BLL, APT8052BFLL, APT8052BLL, APT8075BVFR, APT94N60L2C3
History: FDU8580
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