2SK3782 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3782
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm
Paquete / Cubierta: 3PXSOF03

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2SK3782 Datasheet (PDF)

..1. Size:110K nec
2sk3782.pdf

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3782N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3782 is suitable for converter of ECM. 1.2 0.1 +0.10.3 0.05 MAX. 0.33FEATURES High gain 30 to 0.02 -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise 2 1 -109 dB (V

8.1. Size:112K nec
2sk3783.pdf

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3783N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3783 is suitable for converter of ECM. 1.0FEATURES High gain -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise -109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Super small

8.2. Size:102K fuji
2sk3781-01r.pdf

2SK3781-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

8.3. Size:98K fuji
2sk3788-01.pdf

2SK3788-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

8.4. Size:95K fuji
2sk3789-01r.pdf

2SK3789-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

8.5. Size:104K fuji
2sk3780-01.pdf

2SK3780-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

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