STU35L01HA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU35L01HA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO252 DPAK

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STU35L01HA datasheet

 ..1. Size:111K  samhop
 stu35l01ha std35l01ha.pdf pdf_icon

STU35L01HA

Gre r r P Pr Pr Pro STU/D35L01HA a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 35A 20 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

 6.1. Size:120K  samhop
 stu35l01a std35l01a.pdf pdf_icon

STU35L01HA

Green Product STU/D35L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 35A 20 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

 6.2. Size:107K  samhop
 stu35l01 std35l01.pdf pdf_icon

STU35L01HA

re r r P Pr Pr Pro STU/D35L01 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 35A 100V 24 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I

 9.1. Size:128K  samhop
 stu35n10 std35n10.pdf pdf_icon

STU35L01HA

STU35N10 Green Product STD35N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 21 @ VGS=10V TO-252 and TO-251 Package. 100V 35A 30 @ VGS=4.5V G S STU SERIES STD SERIES ( ) ( ) TO - 252AA D- PAK TO -

MOSTRAR MÁS

Otros transistores... STU458S, STU456S, STU456A, STU452S, STU449S, STU448S, STU36L01A, STU35N10, IRF730, STU35L01A, STU35L01, STU339S, STU336S, STU334S, STU330S, STU328S, STU302S