HUF75333P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75333P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 111 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220

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HUF75333P3 datasheet

 ..1. Size:331K  fairchild semi
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf pdf_icon

HUF75333P3

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impeda

 7.1. Size:226K  fairchild semi
huf75337g3 huf75337p3 huf75337s3s.pdf pdf_icon

HUF75333P3

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 7.2. Size:305K  fairchild semi
huf75332s3st.pdf pdf_icon

HUF75333P3

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 7.3. Size:308K  fairchild semi
huf75339g3 huf75339p3 huf75339s3s.pdf pdf_icon

HUF75333P3

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

Otros transistores... HUF75329P3, HUF75329S3, HUF75329S3S, HUF75329S3ST, HUF75332G3, HUF75332P3, HUF75332S3S, HUF75333G3, IRFP450, HUF75333S3, HUF75333S3S, HUF75333S3ST, HUF75337G3, HUF75337P3, HUF75337S3S, HUF75339G3, HUF75339P3