STU334S Todos los transistores

 

STU334S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU334S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 323 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO252 DPAK

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STU334S Datasheet (PDF)

 ..1. Size:149K  samhop
stu334s std334s.pdf

STU334S
STU334S

GrerrPPrPrProSTU/D334SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.4.7 @ VGS=10VTO-252 and TO-251 Package.60A30V6.8 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

 9.1. Size:102K  samhop
stu330s std330s.pdf

STU334S
STU334S

STU/D330SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.30V 20A38 @ VGS=4.5VGSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA=25C unless o

 9.2. Size:149K  samhop
stu336s std336s.pdf

STU334S
STU334S

GrerrPPrPrProSTU/D336SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.5.6 @ VGS=10VTO-252 and TO-251 Package.55A30V9 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

 9.3. Size:149K  samhop
stu339s std339s.pdf

STU334S
STU334S

GrerrPPrPrProSTU/D339SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.9.6 @ VGS=10VTO-252 and TO-251 Package.40A30V15 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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