HUF75333S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75333S3S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 111 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 56 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 70 nC
Conductancia de drenaje-sustrato (Cd): 1300 pF
Resistencia drenaje-fuente RDS(on): 0.016 Ohm
Empaquetado / Estuche: TO263AB
Búsqueda de reemplazo de MOSFET HUF75333S3S
HUF75333S3S Datasheet (PDF)
1.1. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf 
Size:331K _fairchild_semi
HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models
3.1. huf75332s3st.pdf Size:305K _update_mosfet
HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a
3.2. huf75337s3.pdf Size:122K _update_mosfet
HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V These N-Channel power MOS- FETs are manufactured using • Ultra Low On-Resistance, rDS(ON) = 0.014Ω the innovative UltraFET™ pro- cess. This advanced process technology achieves the low- • Diode Exhibits
3.3. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi
HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th
3.4. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi
HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th
3.5. huf75332.pdf Size:214K _intersil
HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance
Otros transistores... HUF75329S3S , HUF75329S3ST , HUF75332G3 , HUF75332P3 , HUF75332S3S , HUF75333G3 , HUF75333P3 , HUF75333S3 , IRF9530 , HUF75333S3ST , HUF75337G3 , HUF75337P3 , HUF75337S3S , HUF75339G3 , HUF75339P3 , HUF75339S3 , HUF75339S3S .
