STT3414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STT3414
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 69 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET STT3414

STT3414 Datasheet (PDF)

..1. Size:118K samhop
stt3414.pdf

GrerrPPrPrProSTT3414aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS=10VSurface Mount Package.30V 7A 42 @ VGS=4.5V57 @ VGS=2.5VDDDGGGDDSSSTT SERIESSSOT-223(

8.1. Size:132K samhop
stt3418.pdf

GreenProductSTT3418aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.39 @ VGS=10V30V 5A Surface Mount Package.63 @ VGS=4.5V DD G GDSSTT SERIESS SOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C

9.1. Size:184K secos
stt3434n.pdf

STT3434N 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typical

9.2. Size:631K secos
stt3490n.pdf

STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free KEY FEATURES TSOP-6 Low RDS(on) trench technology. AE Low thermal impedance. L Fast switching speed. 6 5 4TYPICAL APPLICATIONS B White LED boost converters. Automotive S

9.3. Size:577K secos
stt3458n.pdf

STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize AHigh Cell Density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4ideal for use

9.4. Size:571K secos
stt3405p.pdf

STT3405P -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4 ideal fo

9.5. Size:461K secos
stt3402n.pdf

STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density AE process. Low RDS(on) assures minimal power loss and conserves energy, L making this device ideal for use in powe

9.6. Size:183K secos
stt3470n.pdf

STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a High Cell Density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typ

9.7. Size:684K secos
stt3457p.pdf

STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typica

9.8. Size:495K secos
stt3423p.pdf

STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize a high cell density Atrench process to provide low RDS(on) and to ensure minimal power ELloss and heat dissipation. Typical applica

9.9. Size:164K secos
stt3471p.pdf

STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize Aa high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4FEATURES

9.10. Size:164K secos
stt3463p.pdf

STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4 ideal

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