STM4800S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

S TM4800SS amHop Microelectronics C orp.J un.07 2006N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VGS = 10V30V 8ASurface Mount Package.28 @ VGS =4.5VSO-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitP

GreenProductSTM4806aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.5 @ VGS=10VSuface Mount Package.30V 15A9.9 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=

SamHop Selection Guide - Mosfet ProductN Channel ProductRds(on) / m Ohm max Qg (nC)Vgs PD Vgs(th) Ciss Coss Crss Qgs QgdPart No. Package Configuration Vds ID ESD() (W) (typ) (pf) (pF) (pF) (nC) (nC)10V 4.5V 4.0V 3.7V 3.1V 2.5V 10V 4.5V 4.0V 2.5VSTM4800S SOP8 Single-N 30 20 8.0 2.50 20.0 28.0 1.70 820 177 60 15.0 7.7 2.20 4.70STM4820 SOP8 Single-N 30 20 8.9 2.50 21.0 30.0 1.70

S T M4884AS amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) typ R ugged and reliable.6 @ V G S = 10V30V 12AS urface Mount Package.8.5 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

STM4880aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9.6A26 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLU

GreenProductSTM4886EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.5 @ VGS=10VSuface Mount Package.30V 17.8A7.5 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless other

GrerrPPrPrProSTM4884SamHop Micrpelectronics Corp.Ver 3.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) TypRugged and reliable.5.5 @VGS=10VSuface Mount Package.30V 13A8.5 @VGS=4.5VD 5 4 G6 3D S7 2D SSO-8D 8 1S1(TA=25C unless otherwise

GreenProductSTM4820aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.21 @ VGS=10VSuface Mount Package.30V 8.9A30 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwi

GreenProductSTM4886aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.3.5 @ VGS=10VSuface Mount Package.30V 18A5.4 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-88 1SD1ABSOLUTE MAXIMUM RATINGS (TA=25C unle

GreenProductSTM4840aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9A28 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=25