FCH190N65FF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCH190N65FF085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14.5 nS
   Cossⓘ - Capacitancia de salida: 2345 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO247

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FCH190N65FF085 Datasheet (PDF)

4.1. Size:1207K fairchild semi
fch190n65f.pdf

August 2014FCH190N65FN-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)

4.2. Size:700K fairchild semi
fch190n65f f085.pdf

December 2014FCH190N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 m DFeatures Typical RDS(on) = 148 m at VGS = 10 V, ID = 10 A Typical Qg(tot) = 63 nC at VGS = 10V, ID = 10 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedraw

4.3. Size:631K onsemi
fch190n65f.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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