FQT2P25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT2P25
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 6.5 nC
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET FQT2P25
FQT2P25 Datasheet (PDF)
fqt2p25.pdf
November 2013FQT2P25P-Channel QFET MOSFET-250 V, -0.55 A, 4.0 Description FeaturesThese P-Channel enhancement mode power field effect -0.55 A, -250 V, RDS(on) = 4.0 (Max.) @ VGS = -10 V,ID = -0.275 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 6.5 nC)technology has been especial
fqt2p25.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqt2p25tf.pdf
May 2001TMQFETFQT2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -0.55A, -250V, RDS(on) = 4.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailore
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918