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FQT2P25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT2P25

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.55 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: SOT223

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FQT2P25 datasheet

 ..1. Size:980K  fairchild semi
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FQT2P25

November 2013 FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Description Features These P-Channel enhancement mode power field effect -0.55 A, -250 V, RDS(on) = 4.0 (Max.) @ VGS = -10 V, ID = -0.275 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 6.5 nC) technology has been especial

 ..2. Size:988K  onsemi
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FQT2P25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:652K  fairchild semi
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FQT2P25

May 2001 TM QFET FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -0.55A, -250V, RDS(on) = 4.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailore

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