FQT2P25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2013FQT2P25P-Channel QFET MOSFET-250 V, -0.55 A, 4.0 Description FeaturesThese P-Channel enhancement mode power field effect -0.55 A, -250 V, RDS(on) = 4.0 (Max.) @ VGS = -10 V,ID = -0.275 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 6.5 nC)technology has been especial

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2001TMQFETFQT2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -0.55A, -250V, RDS(on) = 4.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailore