FCP16N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCP16N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FCP16N60

FCP16N60 Datasheet (PDF)

..1. Size:639K fairchild semi
fcp16n60 fcpf16n60.pdf

August 2014FCP16N60 / FCPF16N60N-Channel SuperFET MOSFET600 V, 16 A, 260 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC )r

..2. Size:1208K fairchild semi
fcp16n60 fcpf16n60.pdf

December 2008 TMSuperFETFCP16N60 / FCPF16N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

..3. Size:668K onsemi
fcp16n60 fcpf16n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:685K fairchild semi
fcp16n60n fcpf16n60nt.pdf

August 2009SupreMOSTMFCP16N60N / FCPF16N60NT N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedte

0.2. Size:750K onsemi
fcp16n60n fcpf16n60nt.pdf

0.3. Size:257K inchange semiconductor
fcp16n60n.pdf

isc N-Channel MOSFET Transistor FCP16N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SML10J225

Liste

Recientemente añadidas las descripciónes de los transistores: