FCP16N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP16N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 167 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO220
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FCP16N60 datasheet
fcp16n60 fcpf16n60.pdf
August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET MOSFET 600 V, 16 A, 260 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC ) r
fcp16n60 fcpf16n60.pdf
December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo
fcp16n60 fcpf16n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp16n60n fcpf16n60nt.pdf
August 2009 SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170 Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based te
Otros transistores... FDC645N , SI3457DV , SSU1N50B , FDP070AN06A0 , FQPF5N60C , FQP9N50C , FQPF9N50C , FDD6296 , IRLZ44N , FDS8960C , FCPF11N60F , HUF76645SF085 , FCPF20N60 , FDS8672S , FDB045AN08F085 , FQB10N50CFTM , FDD13AN06F085 .
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