FCPF11N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF11N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 671 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO220F
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FCPF11N60F Datasheet (PDF)
fcp11n60f fcpf11n60f.pdf

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance
fcpf11n60f.pdf

November 2013FCPF11N60FN-Channel SuperFET FRFET MOSFET600 V, 11 A, 380 mFeatures Description 600 V @ TJ = 150C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 mutilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns)resistanc
fcp11n60n fcpf11n60nt.pdf

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi
fcp11n60 fcpf11n60 fcpf11n60t.pdf

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu
Otros transistores... SSU1N50B , FDP070AN06A0 , FQPF5N60C , FQP9N50C , FQPF9N50C , FDD6296 , FCP16N60 , FDS8960C , IRF630 , HUF76645SF085 , FCPF20N60 , FDS8672S , FDB045AN08F085 , FQB10N50CFTM , FDD13AN06F085 , FDMS039N08B , FDT86256 .
History: NTHL082N65S3F | FDBL86210-F085 | KIA3510A-263
History: NTHL082N65S3F | FDBL86210-F085 | KIA3510A-263



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